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Summary
Description |
Composition dependence of the direct and indirect band gaps of AlAsSb at room temperature (T = 300 K). |
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Source |
Created in MATLAB from the parameters given in: Vurgaftman, I., Meyer, J. R. & Ram-Mohan, L. R. Band parameters for III–V compound semiconductors and their alloys. Journal of Applied Physics 89, 5815–5875 (2001). |
Date |
2024-02-04 |
Author | |
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current | 07:20, 5 February 2024 | 879 × 911 (38 KB) | MaterialsPsych (talk | contribs) | {{Information |Description = Composition dependence of the direct and indirect band gaps of AlAsSb at room temperature (T = 300 K). |Source = Created in MATLAB from the parameters given in: Vurgaftman, I., Meyer, J. R. & Ram-Mohan, L. R. Band parameters for III–V compound semiconductors and their alloys. Journal of Applied Physics 89, 5815–5875 (2001). |Date = 2024-02-04 |Author = MaterialsPsych }} |
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