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A '''ballistic transistor''' is a high-speed [[electronics|electronic]] [[switching device]] through which [[electron]]s flow |
A '''ballistic transistor''' is a high-speed [[electronics|electronic]] [[switching device]] through which [[electron]]s flow dedimpeded, without being slowed down by collisions with [[atom]]s as they are in a conventional [[transistor]]. The ballistic transistor is (as of [[2004]]) still in the experimental stage of development. |
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Two main techniques have emerged for creating a ballistic [[MOSFET]] (a type of [[field-effect transistor]]). The earliest idea was to control the [[oxidation]] process by which the [[ |
Two main techniques have emerged for creating a ballistic [[MOSFET]] (a type of [[field-effect transistor]]). The earliest idea was to control the [[oxidation]] process by which the [[electrical insulation|insulating]] layer in the MOSFET, between the gate and the channel, is created, resulting in a smoother surface that allows electrons to flow swifter. This approach is being investigated by [[Lucent]]'s [[Bell Labs]] [http://www.bell-labs.com/news/1999/december/6/1.html]. A later, more radical, technique is to use atom-deep [[carbon]] sheets, called [[graphene]]. This has been shown to produce [[ballistic conduction]], but the performance of the resulting transistors has not been determined. This technique is being researched in a joint effort between the [[University of Manchester]] in the UK and the Institute for Microelectronics Technology in [[Chernogolovka]], Russia [http://physicsweb.org/articles/news/8/10/13/1]. |
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==External links== |
==External links== |
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*[http://www.rochester.edu/news/show.php?id=2585 Radical 'Ballistic Computing' Chip Bounces Electrons Around Like Billiards] |
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[[Category:Transistor types]] |
[[Category:Transistor types]] |
Revision as of 06:29, 23 July 2009
A ballistic transistor is a high-speed electronic switching device through which electrons flow dedimpeded, without being slowed down by collisions with atoms as they are in a conventional transistor. The ballistic transistor is (as of 2004) still in the experimental stage of development.
Two main techniques have emerged for creating a ballistic MOSFET (a type of field-effect transistor). The earliest idea was to control the oxidation process by which the insulating layer in the MOSFET, between the gate and the channel, is created, resulting in a smoother surface that allows electrons to flow swifter. This approach is being investigated by Lucent's Bell Labs [1]. A later, more radical, technique is to use atom-deep carbon sheets, called graphene. This has been shown to produce ballistic conduction, but the performance of the resulting transistors has not been determined. This technique is being researched in a joint effort between the University of Manchester in the UK and the Institute for Microelectronics Technology in Chernogolovka, Russia [2].